公开(公告)号：US11764219B2

公开(公告)日：2023-09-19

申请号：US16700064

申请日：2019-12-02

Applicant: Intel Corporation

Inventor： Harshitha Vishwanath ,  Renukprasad Hiremath ,  Sukru Yemenicioglu ,  Ranjith Kumar ,  Ruth Amy Brain

IPC: H01L27/092 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L23/5226 ,  H01L23/5286 ,  H01L27/0207

Abstract: Embodiments disclosed herein include a semiconductor device. In an embodiment, the semiconductor device comprises a substrate, and a cell on the substrate. In an embodiment, the cell comprises a plurality of transistors over the substrate, and a first metal layer over the plurality of transistors. In an embodiment, the first metal layer comprises a first power line, wherein a width of the first power line is entirely within the cell, a second power line, wherein a width of the second power line is entirely within the cell, and a plurality of signal lines between the first power line and the second power line.