公开(公告)号：US20210408285A1

公开(公告)日：2021-12-30

申请号：US16913294

申请日：2020-06-26

Applicant: Intel Corporation

Inventor： Ryan HICKEY ,  Glenn A. GLASS ,  Anand S. MURTHY ,  Rushabh SHAH ,  Ju-Hyung NAM

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: Gate-all-around integrated circuit structures having germanium-doped nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having germanium-doped nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. Individual ones of the vertical arrangement of nanowires have a relatively higher germanium concentration at a lateral mid-point of the nanowire than at lateral ends of the nanowire.