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公开(公告)号：US10789124B2
公开(公告)日：2020-09-29
申请号：US16145983
申请日：2018-09-28
Applicant: Intel Corporation
Inventor： Lei Chen , Xin Guo , Shu-Jen Lee , Chu-hsiang Teng , Scott Nelson , Donia Sebastian
Abstract: Examples described herein can be used to reduce a number of re-read operations and potentially avoid data recovery operations, which can be time consuming. A determination can be made of a read voltage to apply during an operation to cause a read of data stored in a region of a memory device. The region of the memory device can be read using the read voltage. If the region is not successfully read, then an error level indication can be measured and a second read voltage can be determined for a re-read operation. If the re-read operation is not successful, then a second error level indication can be measured for the re-read operation. A third read voltage can be selected based on the change from the error level indication to the second error level indication.
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