公开(公告)号：US20250006623A1

公开(公告)日：2025-01-02

申请号：US18217056

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Shuqi Lai ,  Jieying Kong ,  Dilan Seneviratne ,  Whitney Bryks

IPC: H01L23/498

Abstract: Microelectronic integrated circuit package structures include one or more integrated circuit (IC) package metallization levels comprising metallization features. A dielectric material is adjacent to one or more of the metallization features, where the dielectric material comprises a matrix material and a surfactant. A plurality of substantially spherical pores are within the matrix material, where the substantially spherical pores are surrounded by an outer shell comprising the matrix material.