公开(公告)号：US20230102711A1

公开(公告)日：2023-03-30

申请号：US17485151

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Ming-Yi Shen ,  Nita Chandrasekhar ,  Blake Bluestein ,  Tiffany Zink ,  Shaestagir Chowdhury

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Integrated circuit structures including an interconnect feature without a higher-resistance liner material. In absence of a liner, metal of low resistance directly contacts an adjacent dielectric material, enabling lower resistance interconnect. Even for low-k dielectric compositions, adhesion of the metal to the dielectric material is improved through the incorporation of nitrogen proximal to the interface. Prior to deposition of the metal upon a surface of the dielectric, the surface is exposed to nitrogen species to form a nitrogen-rich compound at the surface. The metal deposited upon the surface may then be nitrogen-lean, for example a substantially pure elemental metal or metal alloy.