公开(公告)号：US20210358908A1

公开(公告)日：2021-11-18

申请号：US16876495

申请日：2020-05-18

Applicant: Intel Corporation

Inventor： Robert EHLERT ,  Timothy JEN ,  Alexander BADMAEV ,  Shridhar HEGDE ,  Sandrine CHARUE-BAKKER

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/08 ,  H01L29/167 ,  H01L29/417

Abstract: Integrated circuit structures having high phosphorous dopant concentrations are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each of the epitaxial structures of the first and second source or drain structures includes silicon and phosphorous, the phosphorous having an atomic concentration in a core region of the silicon greater than an atomic concentration in a peripheral region of the silicon.