SEMICONDUCTOR VOID PLACEMENT
    1.
    发明公开

    公开(公告)号:US20240061987A1

    公开(公告)日:2024-02-22

    申请号:US17889405

    申请日:2022-08-17

    CPC classification number: G06F30/398 G06F2113/18

    Abstract: A method of semiconductor modelling includes determining for a virtual model of a layer of a semiconductor package, wherein the layer includes a metal layer, one or more first regions of the layer that do not satisfy a first layer design rule; adding first voids to the one or more first regions to satisfy the first layer design rule; determining for the layer including the metal pattern and the first voids, one or more second regions of the layer that do not satisfy a second layer design rule, different from the first layer design rule; and adding second voids to the one or more second regions to satisfy the second layer design rule.

Patent Agency Ranking