公开(公告)号：US20220359758A1

公开(公告)日：2022-11-10

申请号：US17308853

申请日：2021-05-05

Applicant: Intel Corporation

Inventor： Shailesh Kumar Madisetti ,  Chieh-Jen Ku ,  Wen-Chiang Hong ,  Pei-Hua Wang ,  Cheng Tan ,  Harish Ganapathy ,  Bernhard Sell ,  Lin-Yung Wang

IPC: H01L29/786 ,  H01L29/66

Abstract: Transistors with metal oxide channel material and a multi-composition gate dielectric. A surface of a metal oxide gate dielectric may be nitrided before deposition of a metal oxide channel material, for example to reduce gate capacitance of a TFT. Breakdown voltage and/or drive current of a TFT can be increased through the introduction of an additional metal oxide and/or nitride between the gate electrode and a metal oxide gate dielectric. The introduction of an intervening layer between two layers of a metal oxide gate dielectric can also increase breakdown voltage and/or drive current of a TFT.