Runtime cell row replacement in a memory

    公开(公告)号:US11481294B2

    公开(公告)日:2022-10-25

    申请号:US17262696

    申请日:2018-09-15

    Abstract: Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.

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