公开(公告)号：US20180145083A1

公开(公告)日：2018-05-24

申请号：US15575792

申请日：2015-06-25

Applicant: Intel Corporation

Inventor： Xiaoghong TONG ,  Walid M. HAFEZ ,  Zhiyong MA ,  Peng BAI ,  Chia-Hong JAN ,  Zhanping CHEN

IPC: H01L27/112 ,  G11C17/16 ,  H01L23/525

CPC classification number: H01L27/11206 ,  G11C17/16 ,  H01L23/5252

Abstract: The controlled modification of an antifuse programming voltage is described. In one example, an antifuse circuit is formed on a substrate, including a gate area of the antifuse circuit. A molecule is implanted into the gate area to damage the structure of the gate area. Electrodes are formed over the gate areas to connect the antifuse circuit to other components.