公开(公告)号：US09029233B1

公开(公告)日：2015-05-12

申请号：US14612897

申请日：2015-02-03

Applicant: Intermolecular, Inc.

Inventor： Ronald John Kuse ,  Tony Chiang ,  Michael Miller ,  Prashant Phatak ,  Jinhong Tong

IPC: H01L21/16 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，在第一电极和第二电极之间的开关层，开关层包括第一金属氧化物，第一带隙较大 所述开关层具有第一厚度，以及所述开关层和所述第二电极之间的耦合层，所述耦合层包括第二金属氧化物，所述第二金属氧化物具有大于所述第一带隙的第二带隙，所述耦合层具有 第二厚度小于第一厚度的25％。

公开(公告)号：US20150147865A1

公开(公告)日：2015-05-28

申请号：US14612897

申请日：2015-02-03

Applicant: Intermolecular, Inc.

Inventor： Ronald John Kuse ,  Tony Chiang ,  Michael Miller ,  Prashant Phatak ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，在第一电极和第二电极之间的开关层，开关层包括第一金属氧化物，第一带隙较大 所述开关层具有第一厚度，以及所述开关层和所述第二电极之间的耦合层，所述耦合层包括第二金属氧化物，所述第二金属氧化物具有大于所述第一带隙的第二带隙，所述耦合层具有 第二厚度小于第一厚度的25％。