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1.发明授权Resistive switching memory elements having improved switching characteristics 有权具有改进的开关特性的电阻式开关存储元件公开(公告)号：US08723156B2
公开(公告)日：2014-05-13
申请号：US13656908
申请日：2012-10-22
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。
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公开(公告)号：US09761800B2
公开(公告)日：2017-09-12
申请号：US14312628
申请日：2014-06-23
Applicant: Intermolecular, Inc.
Inventor： Prashant B. Phatak , Ronald J. Kuse , Jinhong Tong
CPC classification number: H01L45/1616 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1641
Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
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公开(公告)号：US09178147B2
公开(公告)日：2015-11-03
申请号：US14619434
申请日：2015-02-11
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC: H01L45/00 , H01L47/00 , H01L27/01 , H01L29/739 , H01L27/24
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
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4.发明授权Resistive-switching memory elements having improved switching characteristics 有权具有改进的开关特性的电阻式开关存储元件公开(公告)号：US09012881B2
公开(公告)日：2015-04-21
申请号：US14255749
申请日：2014-04-17
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。
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5.发明申请Resistive-Switching Memory Elements Having Improved Switching Characteristics 审中-公开具有改进的开关特性的电阻式开关存储元件公开(公告)号：US20140225056A1
公开(公告)日：2014-08-14
申请号：US14255749
申请日：2014-04-17
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。
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Patent Agency Ranking
公开(公告)号：US20130341584A1
公开(公告)日：2013-12-26
申请号：US13974967
申请日：2013-08-23
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
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公开(公告)号：US09178146B2
公开(公告)日：2015-11-03
申请号：US13974967
申请日：2013-08-23
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
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8.发明申请公开(公告)号：US20130089949A1
公开(公告)日：2013-04-11
申请号：US13673504
申请日：2012-11-09
Applicant: Intermolecular Inc.
Inventor： Prashant B. Phatak , Ronald J. Kuse , Jinhong Tong
IPC: H01L45/00
CPC classification number: H01L45/1616 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1641
Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
Abstract translation: 制造具有降低的成形电压的RRAM电阻式开关元件的方法包括阻止形成界面层，并在电介质膜中产生电子缺陷。 抑制电极中的界面层降低成形电压。 电介质膜中的电子缺陷促进导电通路的形成。
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9.发明申请Resistive-Switching Memory Elements Having Improved Switching Characteristics 审中-公开具有改进的开关特性的电阻式开关存储元件公开(公告)号：US20150155486A1
公开(公告)日：2015-06-04
申请号：US14619434
申请日：2015-02-11
Applicant: Intermolecular, Inc.
Inventor： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。
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10.发明申请公开(公告)号：US20140302659A1
公开(公告)日：2014-10-09
申请号：US14312628
申请日：2014-06-23
Applicant: Intermolecular, Inc.
Inventor： Prashant B. Phatak , Ronald J. Kuse , Jinhong Tong
IPC: H01L45/00
CPC classification number: H01L45/1616 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1641
Abstract: Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
Abstract translation: 制造具有降低的成形电压的RRAM电阻式开关元件的方法包括阻止形成界面层，并在电介质膜中产生电子缺陷。 抑制电极中的界面层降低成形电压。 电介质膜中的电子缺陷促进导电通路的形成。
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