公开(公告)号：US20190096669A1

公开(公告)日：2019-03-28

申请号：US15715559

申请日：2017-09-26

Applicant: International Business Machines Corporation

Inventor： Zhenxing Bi ,  Thamarai S. Devarajan ,  Nicolas J. Loubet ,  Binglin Miao ,  Muthumanickam Sankarapandian ,  Charan V. Surisetty ,  Chun W. Yeung ,  Jingyun Zhang

IPC: H01L21/02

Abstract: A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.

公开(公告)号：US10896816B2

公开(公告)日：2021-01-19

申请号：US15715559

申请日：2017-09-26

Applicant: International Business Machines Corporation

Inventor： Zhenxing Bi ,  Thamarai S. Devarajan ,  Nicolas J. Loubet ,  Binglin Miao ,  Muthumanickam Sankarapandian ,  Charan V. Surisetty ,  Chun W. Yeung ,  Jingyun Zhang

IPC: H01L21/02 ,  H01L29/775 ,  H01L29/786 ,  H01L29/40 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423

Abstract: A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.