公开(公告)号：US20030122128A1

公开(公告)日：2003-07-03

申请号：US10323022

申请日：2002-12-18

申请人： International Business Machines Corporation

发明人： Douglas D. Coolbaugh ,  James S. Dunn ,  Michael D. Gordon ,  Mohamed Y. Hammad ,  Jeffrey B. Johnson ,  David C. Sheridan

IPC分类号： H01L029/04

CPC分类号： H01L27/0811 ,  H01L27/0808 ,  H01L29/93 ,  H01L29/94

摘要： Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate having a collector region of a first conductivity type atop a subcollector region, the collector region having a plurality of isolation regions present therein; reach-through implant regions located between at least a pair of the isolation regions; a SiGe layer atop a portion of the substrate not containing a reach-through implant region, the SiGe layer having an extrinsic base region of a second conductivity type which is different from the first conductivity type; and an antimony implant region located between the extrinsic base region and the subcollector region. Another type of varactor disclosed is an MOS varactor which includes at least a poly gate region and a well region wherein the poly gate region and the well region have opposite polarities.

摘要翻译： 提供了具有高可调性和/或与之相关的高品质因素的变形反应器及其制造方法。 公开的一种类型的变容二极管是准超突发的基极 - 集电极结变容二极管，其包括在子集电极区域顶部具有第一导电类型的集电极区域的基板，所述集电极区域中存在多个隔离区域; 位于至少一对隔离区之间的贯穿植入区; 所述SiGe层位于所述衬底的不包含直通注入区域的部分之上，所述SiGe层具有不同于所述第一导电类型的第二导电类型的非本征基区; 以及位于外部基极区域和子集电极区域之间的锑注入区域。 所公开的另一种类型的变容二极管是MOS变容二极管，其至少包括多晶硅栅极区域和阱区域，其中多晶硅栅极区域和阱区域具有相反的极性。