公开(公告)号：US20040198030A1

公开(公告)日：2004-10-07

申请号：US09989822

申请日：2001-11-20

申请人： International Business Machines Corporation

发明人： Frederick W. Buehrer ,  Derek Chen ,  William Chu ,  Scott Crowder ,  Sadanand V. Deshpande ,  David V. Horak ,  Wesley C. Natzle ,  Hung Y. Ng ,  Len Y. Tsou ,  Chienfan Yu

IPC分类号： H01L021/3205

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/28123

摘要： A blocking layer is formed on a hard mask having an initial thickness. Lines are fabricated by patterning the blocking layer and the hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the blocking layer and the substrate to form the line segment with a second dimension across the line segment that is smaller than the first dimension. The blocking layer prevents the formation of reaction product on the hard mask so that the initial thickness of the hard mask is maintained. The blocking layer can also serve as an ARC layer for photoresist patterning so that the use of an additional film layer is not required.

摘要翻译： 在具有初始厚度的硬掩模上形成阻挡层。 线通过图案化阻挡层和硬掩模来制造以提供线段，线段具有跨越线段测量的第一尺寸; 使所述线段的表面层反应以在所述线段的剩余部分上形成反应产物层; 并且除去反应产物而不攻击线段的剩余部分，而不攻击阻挡层和基底，以形成跨越比第一尺寸小的线段的具有第二尺寸的线段。 阻挡层防止在硬掩模上形成反应产物，从而保持硬掩模的初始厚度。 阻挡层也可以用作光致抗蚀剂图案化的ARC层，从而不需要使用附加的膜层。