公开(公告)号：US10818589B2

公开(公告)日：2020-10-27

申请号：US16352452

申请日：2019-03-13

申请人： International Business Machines Corporation

发明人： Hari Prasad Amanapu ,  Cornelius Brown Peethala ,  Raghuveer Patiolla ,  Chih-Chao Yang

IPC分类号： H01L23/532 ,  H01L23/522

摘要： BEOL and MOL interconnect structures with a self-forming sidewall barrier layer are provided. In one aspect, a method of forming an interconnect structure includes: patterning a feature(s) in a dielectric; selectively forming a metal layer at a bottom of the at least one feature; depositing a liner layer lining the feature(s), wherein the conformal liner layer includes a metal alloy AB; depositing a metal onto the liner layer to form the interconnect structure; and annealing the interconnect structure under conditions sufficient to form a barrier layer including the component B along vertical sidewalls of the feature(s). A method of forming an interconnect structure including a via and a trench on top of the via is also provided, as is an interconnect structure.