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公开(公告)号:US09362221B2
公开(公告)日:2016-06-07
申请号:US14688344
申请日:2015-04-16
发明人: Mark Pavier , Daniel Cutler , Scott Palmer , Clive O'Dell , Rupert Burbidge
IPC分类号: H01L25/00 , H01L27/00 , H01L23/522 , H01L29/739 , H01L23/498 , H01L25/07 , H01L27/06
CPC分类号: H01L23/522 , H01L23/49811 , H01L25/072 , H01L25/18 , H01L27/0647 , H01L29/7393 , H01L2924/0002 , H01L2924/00
摘要: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
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公开(公告)号:US20140103393A1
公开(公告)日:2014-04-17
申请号:US14018238
申请日:2013-09-04
发明人: Mark Pavier , Daniel Cutler , Scott Palmer , Clive O'Dell , Rupert Burbidge
IPC分类号: H01L29/739 , H01L23/498
CPC分类号: H01L23/522 , H01L23/49811 , H01L25/072 , H01L25/18 , H01L27/0647 , H01L29/7393 , H01L2924/0002 , H01L2924/00
摘要: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
摘要翻译: 根据示例性实施方式,功率部件包括电气和机械耦合到部件基板的部件基板和功率半导体器件。 功率部件还包括位于组件衬底上的至少一个第一外围接触件和至少一个第二外围触头。 功率半导体器件位于至少一个第一外围接触件和至少一个第二外围接触件之间。 功率半导体器件的至少一个第一周边接触件,至少一个第二外围接触件和表面电极被配置为用于表面安装。 所述至少一个第一外围接触件可电耦合到功率半导体器件。
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公开(公告)号:US09012990B2
公开(公告)日:2015-04-21
申请号:US14018238
申请日:2013-09-04
发明人: Mark Pavier , Daniel Cutler , Scott Palmer , Clive O'Dell , Rupert Burbidge
IPC分类号: H01L29/66 , H01L29/739 , H01L23/498 , H01L25/07
CPC分类号: H01L23/522 , H01L23/49811 , H01L25/072 , H01L25/18 , H01L27/0647 , H01L29/7393 , H01L2924/0002 , H01L2924/00
摘要: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
摘要翻译: 根据示例性实施方式,功率部件包括电气和机械耦合到部件基板的部件基板和功率半导体器件。 功率部件还包括位于组件衬底上的至少一个第一外周接触件和至少一个第二外围触头。 功率半导体器件位于至少一个第一外围接触件和至少一个第二外围接触件之间。 功率半导体器件的至少一个第一周边接触件,至少一个第二外围接触件和表面电极被配置用于表面安装。 所述至少一个第一外围接触件可电耦合到功率半导体器件。
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公开(公告)号:US20150221588A1
公开(公告)日:2015-08-06
申请号:US14688344
申请日:2015-04-16
发明人: Mark Pavier , Daniel Cutler , Scott Palmer , Clive O'Dell , Rupert Burbidge
IPC分类号: H01L23/522 , H01L27/06
CPC分类号: H01L23/522 , H01L23/49811 , H01L25/072 , H01L25/18 , H01L27/0647 , H01L29/7393 , H01L2924/0002 , H01L2924/00
摘要: According to an exemplary implementation, a power component includes a component substrate and a power semiconductor device electrically and mechanically coupled to the component substrate. The power component also includes at least one first peripheral contact and at least one second peripheral contact situated on the component substrate. A power semiconductor device is situated between the at least one first peripheral contact and the at least one second peripheral contact. The at least one first peripheral contact, the at least one second peripheral contact, and a surface electrode of the power semiconductor device are configured for surface mounting. The at least one first peripheral contact can be electrically coupled to the power semiconductor device.
摘要翻译: 根据示例性实施方式,功率部件包括电气和机械耦合到部件基板的部件基板和功率半导体器件。 功率部件还包括位于组件衬底上的至少一个第一外围接触件和至少一个第二外围触头。 功率半导体器件位于至少一个第一外围接触件和至少一个第二外围接触件之间。 功率半导体器件的至少一个第一周边接触件,至少一个第二外围接触件和表面电极被配置用于表面安装。 所述至少一个第一外围接触件可电耦合到功率半导体器件。
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