公开(公告)号：US20220005827A1

公开(公告)日：2022-01-06

申请号：US17362557

申请日：2021-06-29

Applicant: Invensas Corporation

Inventor： Xu Chang ,  Belgacem Haba ,  Rajesh Katkar ,  David Edward Fisch ,  Javier A. Delacruz

IPC: H01L27/11582 ,  H01L27/11556

Abstract: Techniques for manufacturing memory devices, such as 3-dimensional NAND (3D-NAND) memory devices, may include splitting gate planes (e.g., the planes that include the word lines) into strips, thereby splitting the memory cells and increasing a density of memory cells for a respective memory device. The techniques described herein are applicable to various types of 3D-NAND or other memory devices.