公开(公告)号：US20110248710A1

公开(公告)日：2011-10-13

申请号：US12755803

申请日：2010-04-07

申请人： Isamu SATO ,  Hiroshi Ikeda ,  Mikio Matsuzaki ,  Tetsuya Roppongi ,  Noboru Yamanaka ,  Tsutomu Aoyama

发明人： Isamu SATO ,  Hiroshi Ikeda ,  Mikio Matsuzaki ,  Tetsuya Roppongi ,  Noboru Yamanaka ,  Tsutomu Aoyama

IPC分类号： G01R33/02

CPC分类号： G11B5/455 ,  G01R33/098 ,  G01R33/1284

摘要： A measuring circuit system in a magnetic field measuring apparatus of the invention has an amplifier and a band-pass filter connected in sequence on an output terminal side of the TMR element, the band-pass filter is a narrow-range band-pass filter such that a peak pass frequency of the filter that is a center is a basic frequency selected from a range of 10 to 40 GHz and a band width centered around the basic frequency is a narrow range of ±0.5 to ±4 GHz; and with the measuring circuit system, an SIN ratio (SNR) of 3 dB or greater is obtained, the SNR being defined by a ratio of an amplitude S of a high-frequency generated signal induced by the TMR element to a total noise N that is a sum of a head noise generated by the TMR element and a circuit noise generated by the amplifier. With such a configuration, an in-plane high-frequency magnetic field generated by a microwave-assisted magnetic head is reliably and precisely measured.

摘要翻译： 本发明的磁场测量装置中的测量电路系统具有在TMR元件的输出端侧依次连接的放大器和带通滤波器，带通滤波器是窄范围带通滤波器， 作为中心的滤波器的峰值通过频率是从10〜40GHz的范围选择的基本频率，以基本频率为中心的频带宽度为±0.5〜±4GHz的窄范围; 并且利用测量电路系统，获得3dB或更大的SIN比（SNR），SNR由TMR元件引起的高频产生信号的振幅S与总噪声N的比值定义， 是由TMR元件产生的头噪声和由放大器产生的电路噪声的总和。 通过这样的结构，可以可靠且精确地测量由微波辅助磁头产生的面内高频磁场。

公开(公告)号：US20080247097A1

公开(公告)日：2008-10-09

申请号：US11679814

申请日：2007-02-27

申请人： Isamu SATO ,  Rachid SBIAA

发明人： Isamu SATO ,  Rachid SBIAA

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  G11B5/3912

摘要： A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

摘要翻译： 磁阻效应元件具有包括自由层的叠层结构，该自由层包括两个铁磁层，包含两个铁磁层的被钉扎层以及由单个铁磁层组成的至少一个纳米接触部分，并且设置在自由层和 固定层。 自由层和被钉扎层之间的距离，即层叠方向上的纳米接触部分的厚度不超过费米长度，优选小于100nm。