公开(公告)号：US06617034B1

公开(公告)日：2003-09-09

申请号：US09601441

申请日：2000-08-01

申请人： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

发明人： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

IPC分类号： H01L21265

CPC分类号： H01L21/3226 ,  H01L21/26533 ,  H01L21/76243

摘要： A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.

摘要翻译： 提供了一种高质量的SOI衬底，其允许以其提高的成品率在其上形成LSI并实现优异的电性能及其制造方法。 SOI衬底通过在硅单晶衬底上形成嵌入的氧化物层并形成用于在嵌入的氧化物层上形成器件的SOI层而获得，并且其特征在于包含不密集的凹坑状缺陷的SOI层 大于5cm-2或密度小于1件/ cm2的包含针孔缺陷的嵌入式氧化物层。

公开(公告)号：US07204887B2

公开(公告)日：2007-04-17

申请号：US10149939

申请日：2001-10-16

申请人： Keisuke Kawamura ,  Tsutomu Sasaki ,  Atsuki Matsumura ,  Atsushi Ikari ,  Isao Hamaguchi ,  Yoshiharu Inoue ,  Koki Tanaka ,  Shunichi Hayashi

发明人： Keisuke Kawamura ,  Tsutomu Sasaki ,  Atsuki Matsumura ,  Atsushi Ikari ,  Isao Hamaguchi ,  Yoshiharu Inoue ,  Koki Tanaka ,  Shunichi Hayashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  H01L21/67309 ,  H01L21/6875 ,  Y10S206/832

摘要： The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

摘要翻译： 本发明提供一种能够在硅晶片的高温热处理中不降低生产率和低成本地充分抑制滑移位错的晶片保持器，晶片支撑构件，晶片舟皿和热处理炉，以及 所述晶片保持器的特征在于：晶片保持器由晶片支撑板和安装在所述晶片支撑板上的三个或更多个晶片支撑构件组成，每个晶片支撑构件具有晶片支撑部分或更多个; 所述晶片支撑构件中的至少一个是倾斜晶片支撑构件，其在上表面上具有多个向上凸起的晶片支撑部分并且可相对于所述晶片支撑板倾斜; 并且晶片由至少四个晶片支撑部分支撑。

公开(公告)号：US07084459B2

公开(公告)日：2006-08-01

申请号：US10343273

申请日：2002-05-15

申请人： Tsutomu Sasaki ,  Isao Hamaguchi ,  Atsuki Matsumura

发明人： Tsutomu Sasaki ,  Isao Hamaguchi ,  Atsuki Matsumura

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/76243

摘要： There is provided an SOI substrate having an SOI structure with an insulating layer and a surface single crystal silicon layer successively formed on a single crystal wafer, the SOI substrate having no pit generation in the SOI layer, being producible at low cost and at high productivity and having excellent gettering capacity, wherein the SOI substrate contains nitrogen and carbon with a nitrogen content of no greater than 1×1016 atoms/cm3 and a carbon content of no greater than 1×1018 atoms/cm3.

摘要翻译： 提供了具有绝缘层和连续形成在单晶晶片上的SOI结构的SOI衬底，SOI衬底在SOI层中不产生凹坑，可以低成本和高生产率生产 并且具有优异的吸气能力，其中SOI衬底含有氮含量不大于1×10 16原子/ cm 3的氮和碳，碳含量不大于 1×10 18原子/ cm 3。

公开(公告)号：US5534446A

公开(公告)日：1996-07-09

申请号：US534169

申请日：1995-09-26

申请人： Masaharu Tachimori ,  Takayuki Yano ,  Yasuo Tsumori ,  Tatsuo Nakajima ,  Isao Hamaguchi

发明人： Masaharu Tachimori ,  Takayuki Yano ,  Yasuo Tsumori ,  Tatsuo Nakajima ,  Isao Hamaguchi

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  Y10S438/909

摘要： A process for producing a semiconductor substrate, including the phases of implanting oxygen ions into a semiconductor silicon substrate through one surface thereof to form a high oxygen concentration layer in the semiconductor silicon substrate, and then heat-treating the semiconductor substrate to cause a chemical reaction to occur between the implanted oxygen ions and the silicon, thereby forming an insulating silicon oxide film in the semiconductor silicon substrate, wherein the heat treatment phase includes at least a heat treatment step using an atmosphere having an oxygen partial pressure of 5.times.10.sup.3 Pa or more.The process is advantageously used to produce a high quality SOI semiconductor substrate in which the number of the defects providing a path for current leakage is reduced, the buried oxide layer has an improved dielectric breakdown strength, the interface between the buried oxide film and the adjoining silicon layers has a small roughness, and the buried oxide film can be produced with a wider range of thickness.

摘要翻译： 一种制造半导体衬底的方法，包括通过其一个表面将氧离子注入到半导体硅衬底中以在半导体硅衬底中形成高氧浓度层的相，然后对半导体衬底进行热处理以引起化学反应 发生在注入的氧离子和硅之间，从而在半导体硅衬底中形成绝缘氧化硅膜，其中热处理阶段至少包括使用氧分压为5×10 3 Pa以上的气氛的热处理工序。 该方法有利地用于制造高质量的SOI半导体衬底，其中提供漏电路径的缺陷数量减少，掩埋氧化物层具有改善的介电击穿强度，掩埋氧化膜与邻接层之间的界面 硅层具有较小的粗糙度，并且能够以较宽的厚度范围制造掩埋氧化膜。

公开(公告)号：US5918151A

公开(公告)日：1999-06-29

申请号：US666287

申请日：1996-06-21

申请人： Masaharu Tachimori ,  Takayuki Yano ,  Isao Hamaguchi ,  Tatsuo Nakajima

发明人： Masaharu Tachimori ,  Takayuki Yano ,  Isao Hamaguchi ,  Tatsuo Nakajima

IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L27/12 ,  H01J37/317

CPC分类号： H01L21/26533

摘要： A method for manufacturing an SOI semiconductor substrate and a manufacturing apparatus therefor in which a mean implantation depth and a dose of each of a series of oxygen ion implantations are continuously or stepwise changed, a depthwise distribution of an oxygen atom concentration has a single peak and uniform in a plane at a predetermined depth, a maximum oxygen atom concentration is preferably no larger than 2.25.times.10.sup.22 atoms/cm.sup.3 and no smaller than 1.0.times.10.sup.22 atoms/cm.sup.3, a total oxygen dose is equal to a desired thickness of a buried oxide film multiplied by 4.48.times.10.sup.22 (in ions/cm.sup.3), and preferably a thermal process at a temperature of 1300.degree. C. or higher is applied after the completion of the oxygen ion implantation to form the buried oxide film.

摘要翻译： PCT No.PCT / JP94 / 02297 Sec。 371日期：1996年6月21日 102（e）日期1996年6月21日PCT 1994年12月28日PCT PCT。 WO95 / 18462 PCT出版物 日期1995年7月6日一种用于制造SOI半导体衬底的方法及其制造装置，其中一系列氧离子注入的平均注入深度和剂量连续或逐步改变，氧原子浓度的深度分布 在预定深度的平面中具有单一峰均匀，最大氧原子浓度优选不大于2.25×10 22原子/ cm 3且不小于1.0×10 22原子/ cm 3，总氧剂量等于所需厚度 埋入氧化膜乘以4.48×1022（离子/ cm 3），优选在1300℃或更高温度下的热处理在氧离子注入完成之后施加以形成掩埋氧化膜。