公开(公告)号：US06840250B2

公开(公告)日：2005-01-11

申请号：US10117778

申请日：2002-04-05

申请人： Ismail Kashkoush ,  Richard Novak ,  Tom Mancuso ,  Jim Vadimsky

发明人： Ismail Kashkoush ,  Richard Novak ,  Tom Mancuso ,  Jim Vadimsky

IPC分类号： B08B3/12 ,  H01L21/00 ,  B08B7/04

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A process tank for processing a plurality of wafers having a diameter, the process tank comprising: two substantially vertical side walls being a first distance apart; wherein the first distance is substantially equal to the diameter of the wafer; two upwardly angled walls positioned between the side walls; a first transducer array coupled to a first of the upwardly angled walls, the first transducer array extending a length less than the diameter of the wafer; and a second transducer array coupled to a second of the upwardly angled walls, the second transducer array extending a length less than the diameter of the wafer. It is preferred that the process tank further comprise a fluid inlet positioned between the upwardly angled walls. In another aspect, the invention is a method of processing wafers comprising: filling the process tank described above with a wafer processing liquid through the tank inlet; submerging a wafer carrier holding a plurality wafers into the tank; and applying megasonic energy to the liquid through the first and second transducer arrays for a predetermined time and in a predetermined pattern.

摘要翻译： 一种用于处理具有直径的多个晶片的处理罐，所述处理罐包括：两个基本上垂直的侧壁，其间隔开第一距离; 其中所述第一距离基本上等于所述晶片的直径; 位于侧壁之间的两个向上倾斜的壁; 耦合到所述向上倾斜的第一壁的第一换能器阵列，所述第一换能器阵列延伸的长度小于所述晶片的直径; 以及耦合到所述向上倾斜的壁中的第二个的第二换能器阵列，所述第二换能器阵列延伸的长度小于所述晶片的直径。 优选地，处理罐还包括位于向上成角度的壁之间的流体入口。 另一方面，本发明是一种处理晶片的方法，其特征在于，包括：用晶片处理液体通过所述槽入口填充上述处理槽; 将保持多个晶片的晶片载体浸入所述槽中; 以及通过所述第一和第二换能器阵列在预定时间内以预定模式对所述液体施加兆声波能量。