公开(公告)号：US20090188625A1

公开(公告)日：2009-07-30

申请号：US12020696

申请日：2008-01-28

申请人： JAMES D. CARDUCCI ,  KIN PONG LO ,  KALLOL BERA

发明人： JAMES D. CARDUCCI ,  KIN PONG LO ,  KALLOL BERA

IPC分类号： H01L21/306

CPC分类号： H01J37/32623 ,  H01J37/32467

摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

摘要翻译： 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。