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公开(公告)号:US11094909B2
公开(公告)日:2021-08-17
申请号:US15178828
申请日:2016-06-10
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor: Hideo Hosono , Yoshitake Toda , Toshinari Watanabe , Naomichi Miyakawa , Kazuhiro Ito , Satoru Watanabe , Akira Mitsui , Kazuto Ohkoshi
Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.