公开(公告)号：US12100529B2

公开(公告)日：2024-09-24

申请号：US16270354

申请日：2019-02-07

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo Hosono ,  Yoshitake Toda ,  Katsuro Hayashi ,  Setsuro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Toshinari Watanabe ,  Kazuhiro Ito

IPC: H01B1/08 ,  C04B35/44 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01M4/00 ,  H10K50/82

CPC classification number: H01B1/08 ,  C04B35/44 ,  C04B35/62645 ,  C23C14/08 ,  C23C14/082 ,  C23C14/3414 ,  C23C14/35 ,  H01M4/00 ,  C04B2235/3208 ,  C04B2235/664 ,  H10K50/82

Abstract: Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm−3 and less than or equal to 2.3×1021 cm−3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material including calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

公开(公告)号：US11094909B2

公开(公告)日：2021-08-17

申请号：US15178828

申请日：2016-06-10

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo Hosono ,  Yoshitake Toda ,  Toshinari Watanabe ,  Naomichi Miyakawa ,  Kazuhiro Ito ,  Satoru Watanabe ,  Akira Mitsui ,  Kazuto Ohkoshi

IPC: H01L51/50 ,  H01L51/44 ,  H01L51/42 ,  H01L51/00

Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.

公开(公告)号：US11871590B2

公开(公告)日：2024-01-09

申请号：US17152142

申请日：2021-01-19

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo Hosono ,  Yoshitake Toda ,  Satoru Watanabe ,  Toshinari Watanabe ,  Kazuhiro Ito ,  Naomichi Miyakawa ,  Nobuhiro Nakamura

IPC: H10K30/15 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02 ,  H01J37/34 ,  H01L31/032 ,  H10K50/16 ,  H10K50/18 ,  H10K50/17 ,  H10K102/00 ,  H10K102/10 ,  H01L31/0256

CPC classification number: H10K30/152 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/352 ,  H01J37/3429 ,  H01L21/02565 ,  H01L21/02631 ,  H01L31/0324 ,  H01L2031/0344 ,  H10K50/16 ,  H10K50/171 ,  H10K50/18 ,  H10K2102/00 ,  H10K2102/102 ,  Y02E10/549 ,  Y02P70/50

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US10249402B2

公开(公告)日：2019-04-02

申请号：US14567047

申请日：2014-12-11

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  ASAHI GLASS COMPANY, LIMITED ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo Hosono ,  Yoshitake Toda ,  Katsuro Hayashi ,  Setsuro Ito ,  Satoru Watanabe ,  Naomichi Miyakawa ,  Toshinari Watanabe ,  Kazuhiro Ito

IPC: C23C14/34 ,  H01B1/08 ,  C23C14/08 ,  C23C14/35 ,  C04B35/44 ,  C04B35/626 ,  H01L51/52

Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.