-
公开(公告)号：US10916482B2
公开(公告)日：2021-02-09
申请号：US13937952
申请日：2013-07-09
发明人： Yoke Hor Phua , Yung Kuan Hsiao
IPC分类号： H01L23/00 , H01L23/31 , H01L21/66 , H01L21/56 , H01L21/683
摘要： A semiconductor wafer has a plurality of semiconductor die distributed over a surface area. The semiconductor die are singulated from the semiconductor wafer. The semiconductor die are mounted to a carrier to form a reconstituted semiconductor wafer. The carrier has a surface area 10-50% larger than the surface area of the semiconductor wafer. The number of semiconductor die mounted to the carrier is greater than a number of semiconductor die singulated from the semiconductor wafer. The reconstituted wafer is mounted within a chase mold. The chase mold is closed with the semiconductor die disposed within a cavity of the chase mold. An encapsulant is dispersed around the semiconductor die within the cavity under temperature and pressure. The encapsulant can be injected into the cavity of the chase mold. The reconstituted wafer is removed from the chase mold. An interconnect structure is formed over the reconstituted wafer.
-
2.发明授权公开(公告)号：US11227809B2
公开(公告)日：2022-01-18
申请号：US15457736
申请日：2017-03-13
发明人： See Chian Lim , Teck Tiong Tan , Yung Kuan Hsiao , Ching Meng Fang , Yoke Hor Phua , Bartholomew Liao
IPC分类号： H01L21/56 , H01L23/31 , H01L23/00 , H01L23/29 , H01L23/14 , H01L23/498 , H01L23/538 , H01L21/768 , H01L23/15
摘要： A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.
-
3.发明申请公开(公告)号：US20220093479A1
公开(公告)日：2022-03-24
申请号：US17457974
申请日：2021-12-07
发明人： See Chian Lim , Teck Tiong Tan , Yung Kuan Hsiao , Ching Meng Fang , Yoke Hor Phua , Bartholomew Liao
IPC分类号： H01L23/31 , H01L23/00 , H01L23/29 , H01L23/14 , H01L23/498 , H01L23/538 , H01L21/56 , H01L21/768 , H01L23/15
摘要： A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.
-
-
搜索结果
3 条记录 (耗时 0.013 秒)
