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公开(公告)号:US20230352543A1
公开(公告)日:2023-11-02
申请号:US18039668
申请日:2021-11-24
IPC分类号: H01L29/207 , H01L29/04 , H01L21/02
CPC分类号: H01L29/207 , H01L29/045 , H01L21/02395 , H01L21/02433
摘要: A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.