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公开(公告)号：US20190226116A1
公开(公告)日：2019-07-25
申请号：US16312109
申请日：2017-06-28
Applicant: JFE MINERAL COMPANY, LTD.
Inventor： Kazuhiko ECHIZENYA
Abstract: Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.
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