公开(公告)号：US11600758B2

公开(公告)日：2023-03-07

申请号：US16959035

申请日：2019-03-19

Applicant: JIANGSU UNIVERSITY

Inventor： Ruochen Wang ,  Ding Luo ,  Wei Yu ,  Weiqi Zhou ,  Long Chen

IPC: H01L35/32 ,  G01R21/06 ,  H01L35/10 ,  G01R31/26

Abstract: The present invention discloses an asymmetrical PN junction thermoelectric couple structure and its parameter determination method. By changing the structural parameters of p-type semiconductor or n-type semiconductor, the current generated by p-type semiconductor is equal to the current generated by the n-type semiconductor, so that the high-efficiency output of PN junction thermoelectric couple can be realized. Meanwhile, the present invention provides a method for determining the parameters of PN junction based on the numerical solution method. Finally, the optimal size parameters of PN junction are obtained.