公开(公告)号：US20210217907A1

公开(公告)日：2021-07-15

申请号：US17055370

申请日：2019-06-21

Applicant: JINGAO SOLAR CO., LTD.

Inventor： Xiaoye CHEN ,  Wenjuan XUE ,  Xiulin JIANG ,  Haipeng YIN

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0368

Abstract: The disclosure relates to a crystalline silicon solar cell and a preparation method, and a photovoltaic module, belonging to the technical field of solar cells. The crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. In the disclosure, the gallium oxide layer in direct contact with the P-type silicon layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced, the voltage and current of the solar cell are improved, and photovoltaic conversion efficiency of the solar cell is improved, thus improving output power of the photovoltaic module, reducing cost per kilowatt hour of electricity and improving cost performance of photovoltaic power generation. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index, and also facilitates improvement of the performance of the crystalline silicon solar cell.

公开(公告)号：US20220029040A1

公开(公告)日：2022-01-27

申请号：US17296492

申请日：2019-06-28

Applicant: JINGAO SOLAR CO., LTD.

Inventor： Haipeng YIN ,  Wei SHAN ,  Kun TANG

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/036 ,  H01L31/0224

Abstract: The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic assembly. The crystalline silicon solar cell includes a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer.