公开(公告)号：US20160163730A1

公开(公告)日：2016-06-09

申请号：US14959209

申请日：2015-12-04

申请人： JOON-SUNG LIM ,  JANG-GN YUN ,  SUNGHOON BAE ,  JAESUN YUN ,  KYU-BAIK CHANG

发明人： JOON-SUNG LIM ,  JANG-GN YUN ,  SUNGHOON BAE ,  JAESUN YUN ,  KYU-BAIK CHANG

IPC分类号： H01L27/115 ,  H01L29/423

CPC分类号： H01L27/11582 ,  H01L27/0688 ,  H01L27/11573 ,  H01L27/11575

摘要： A semiconductor device includes a logic structure including a logic circuit disposed in a circuit region and a lower insulation covering the logic circuit, a memory structure on the logic structure, a stress relaxation structure interposed between the logic structure and the memory structure in the circuit region, and a connection structure electrically connecting the memory structure to the logic circuit along a conductive path that extends through a connection region of the device beside the circuit region.

摘要翻译： 半导体器件包括逻辑结构，该逻辑结构包括布置在电路区域中的逻辑电路和覆盖逻辑电路的下绝缘体，逻辑结构上的存储器结构，插入逻辑结构和电路区域中的存储器结构之间的应力松弛结构 以及连接结构，其沿着沿着电路区域旁边的器件的连接区域延伸的导电路径将存储器结构与逻辑电路电连接。