公开(公告)号：US20200333706A1

公开(公告)日：2020-10-22

申请号：US16923140

申请日：2020-07-08

Applicant: JSR CORPORATION

Inventor： Ryuichi SERIZAWA ,  Nozomi SATOU ,  Yuusuke OOTSUBO

IPC: G03F7/00 ,  G03F7/40 ,  G03F7/20 ,  G03F7/09 ,  G03F7/004

Abstract: A patterned substrate-producing method includes applying a surface treatment agent on a surface layer of a substrate. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed to form a resist pattern. The substrate is etched using the resist pattern as a mask. The surface treatment agent includes: a polymer including a group including a polar group at at least one end of a main chain of the polymer; and a solvent.

公开(公告)号：US20200159121A1

公开(公告)日：2020-05-21

申请号：US16750616

申请日：2020-01-23

Applicant: JSR CORPORATION

Inventor： Ryuichi SERIZAWA ,  Nozomi SATOU ,  Yuusuke OOTSUBO

IPC: G03F7/11 ,  C09D7/63

Abstract: A metal-containing film-forming composition for lithography with an extreme ultraviolet ray or electron beam includes a compound and a solvent. The compound includes a metal element and an oxygen atom, and further includes a metal-oxygen covalent bond. The metal element in the compound belongs to period 3 to period 7 of group 3 to group 15 in periodic table. The solvent includes a first solvent component having a normal boiling point of less than 160° C. and a second solvent component having a normal boiling point of no less than 160° C. and less than 400° C. The solvent includes an alcohol solvent. A percentage content of the alcohol solvent in the solvent is no less than 30% by mass.

公开(公告)号：US20200218161A1

公开(公告)日：2020-07-09

申请号：US16819315

申请日：2020-03-16

Applicant: JSR CORPORATION

Inventor： Ryuichi SERIZAWA ,  Nozomi SATOU ,  Yuusuke OOTSUBO ,  Tomoya TAJI ,  Tomoaki SEKO ,  Souta NISHIMURA

IPC: G03F7/20 ,  G03F7/004

Abstract: A resist pattern-forming method includes treating a surface layer of a substrate with an ultraviolet ray, plasma, water, an alkali, an acid, hydrogen peroxide, ozone, or a combination thereof. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film directly or indirectly on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed. The at least one metal element preferably belongs to period 3 to period 7 of group 3 to group 15 in periodic table.