公开(公告)号：US20220075267A1

公开(公告)日：2022-03-10

申请号：US17528373

申请日：2021-11-17

Applicant: JSR CORPORATION

Inventor： Yuusuke OOTSUBO ,  Ryuichi SERIZAWA ,  Yuuki OZAKI ,  Kazunori SAKAI

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/32

Abstract: A film-forming composition includes: a metal compound; a nitrogen-containing organic compound; and a solvent. The nitrogen-containing organic compound is: a first compound including a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound including a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof. A method of forming a resist pattern includes applying the film-forming composition directly or indirectly on a substrate to form a resist underlayer film. An organic-resist-film-forming composition is applied directly or indirectly on the resist underlayer film to form an organic resist film. The organic resist film is exposed to a radioactive ray. The organic resist film exposed is developed.