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公开(公告)号：US20240030030A1
公开(公告)日：2024-01-25
申请号：US18374041
申请日：2023-09-28
Applicant: JSR CORPORATION
Inventor： Ken MARUYAMA , Takayoshi ABE , Kazunori SAKAI
IPC: H01L21/027 , G03F7/004
CPC classification number: H01L21/0275 , G03F7/0047 , H01L21/32139
Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.
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2.发明申请公开(公告)号：US20170154782A1
公开(公告)日：2017-06-01
申请号：US14955473
申请日：2015-12-01
Applicant: JSR Corporation
Inventor： Shin-ya NAKAFUJI , Goji WAKAMATSU , Tsubasa ABE , Kazunori SAKAI
IPC: H01L21/308 , H01L21/027 , H01L21/306 , C08G65/40
CPC classification number: C08G65/4043 , C08G65/40 , C08G65/4031 , G03F7/094 , H01L21/0271 , H01L21/0274 , H01L21/30604 , H01L21/3081
Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.
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公开(公告)号：US20250044701A1
公开(公告)日：2025-02-06
申请号：US18919818
申请日：2024-10-18
Applicant: JSR CORPORATION
Inventor： Kazunori SAKAI , Tatsuya KASAI , Ayaka SUZUKI , Akitaka NII
IPC: G03F7/00 , C08K5/5419 , C09D133/06 , G03F7/039 , G03F7/075 , G03F7/16 , H01L21/027
Abstract: A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.
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公开(公告)号：US20210318619A1
公开(公告)日：2021-10-14
申请号：US17356582
申请日：2021-06-24
Applicant: JSR CORPORATION
Inventor： Yuusuke OOTSUBO , Tatsuya SAKAI , Kazunori SAKAI
Abstract: A composition includes: a cobalt-containing compound not containing a cobalt-carbon bond; and a solvent. The composition is capable of forming a coating film. The solvent preferably includes an organic solvent, and the organic solvent preferably includes an alcohol solvent. A method of producing a substrate includes applying the composition directly or indirectly on a substrate to form a coating film.
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公开(公告)号：US20210181627A1
公开(公告)日：2021-06-17
申请号：US17176263
申请日：2021-02-16
Applicant: JSR CORPORATION , CORNELL UNIVERSITY
Inventor： Kazunori SAKAI , Vasiliki KOSMA , Christopher K. OBER , Emmanuel P. GIANNELIS
Abstract: A pattern-forming method includes: applying directly or indirectly on a substrate a radiation-sensitive composition containing a complex and an organic solvent to form a film; exposing the film to an ultraviolet ray, a far ultraviolet ray, an extreme ultraviolet ray, or an electron beam; and developing the film exposed, wherein the complex is represented by formula (1). [MmLnQp] (1) In the formula (1), M represents a zinc atom, a cobalt atom, a nickel atom, a hafnium atom, a zirconium atom, a titanium atom, an iron atom, a chromium atom, a manganese atom, or an indium atom; and L represents a ligand derived from a compound represented by formula (2). R1—CHR3—R2 (2) In the formula (2), R1 and R2 each independently represent —C(═O)—RA, —C(═O)—ORB, or —CN.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180114698A2
公开(公告)日：2018-04-26
申请号：US14955473
申请日：2015-12-01
Applicant: JSR Corporation
Inventor： Shin-ya NAKAFUJI , Goji WAKAMATSU , Tsubasa ABE , Kazunori SAKAI
IPC: H01L21/308 , C08G65/40 , H01L21/027 , H01L21/306
CPC classification number: C08G65/4043 , C08G65/40 , C08G65/4031 , G03F7/094 , H01L21/0271 , H01L21/0274 , H01L21/30604 , H01L21/3081
Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.
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公开(公告)号：US20220204535A1
公开(公告)日：2022-06-30
申请号：US17696982
申请日：2022-03-17
Applicant: JSR CORPORATION
Inventor： Yuusuke OOTSUBO , Ryuichi SERIZAWA , Kazunori SAKAI
Abstract: A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or le and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which le and either R2 or R3 bond.
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公开(公告)号：US20190258161A1
公开(公告)日：2019-08-22
申请号：US16282698
申请日：2019-02-22
Applicant: JSR CORPORATION
Inventor： Kazunori SAKAI
Abstract: A radiation-sensitive composition contains: a compound which includes a metal atom, a ligand derived from an organic acid and ligand derived from a base; and an organic solvent. The base is other than a triethylamine. Also, a radiation-sensitive composition contains: a compound obtained by mixing a metal-containing compound, an organic acid and a base; and an organic solvent. The base is other than a triethylamine.
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公开(公告)号：US20180046081A1
公开(公告)日：2018-02-15
申请号：US15672660
申请日：2017-08-09
Applicant: JSR CORPORATION
Inventor： Masayuki MIYAKE , Goji WAKAMATSU , Tsubasa ABE , Kazunori TAKANASHI , Kazunori SAKAI
IPC: G03F7/09 , G03F7/004 , C08G8/20 , H01L21/027 , H01L21/033 , G03F7/11 , H01L21/02 , H01L21/768
Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.
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公开(公告)号：US20220075267A1
公开(公告)日：2022-03-10
申请号：US17528373
申请日：2021-11-17
Applicant: JSR CORPORATION
Inventor： Yuusuke OOTSUBO , Ryuichi SERIZAWA , Yuuki OZAKI , Kazunori SAKAI
Abstract: A film-forming composition includes: a metal compound; a nitrogen-containing organic compound; and a solvent. The nitrogen-containing organic compound is: a first compound including a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound including a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof. A method of forming a resist pattern includes applying the film-forming composition directly or indirectly on a substrate to form a resist underlayer film. An organic-resist-film-forming composition is applied directly or indirectly on the resist underlayer film to form an organic resist film. The organic resist film is exposed to a radioactive ray. The organic resist film exposed is developed.
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