公开(公告)号：US08808974B2

公开(公告)日：2014-08-19

申请号：US13769907

申请日：2013-02-19

Applicant: JSR Corporation

Inventor： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/00 ,  G03F7/039

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

Abstract: A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

Abstract translation: 形成图案的方法包括在基板上提供第一正性辐射敏感树脂组合物以形成第一抗蚀剂层。 第一正性辐射敏感性树脂组合物包含交联剂，含有酸不稳定基团并且不含交联基团的聚合物，辐射敏感性酸产生剂和溶剂。 第一抗蚀剂层选择性地暴露于辐射，并显影以形成第一抗蚀剂图案。 第一抗蚀剂图案对辐射无活性，或在碱性显影剂或第二正性辐射敏感树脂组合物中不溶化。 第二正性辐射敏感性树脂组合物设置在基板上以形成第二抗蚀剂层。 第二抗蚀剂层选择性地暴露于辐射，并显影以在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。