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    Switch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS process
    1.
    发明授权
    Switch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS process 失效
    开关驱动器电路，用于使用标准双阱CMOS工艺为负栅极擦除闪存EEPROMS提供小扇区尺寸

    公开(公告)号：US5663907A

    公开(公告)日：1997-09-02

    申请号：US639296

    申请日：1996-04-25

    申请人： Jack E. Frayer ,  John D. Lattanzi ,  Shouchang Tsao ,  Chan-Sui Pang ,  Yueh Y. Ma

    发明人： Jack E. Frayer ,  John D. Lattanzi ,  Shouchang Tsao ,  Chan-Sui Pang ,  Yueh Y. Ma

    IPC分类号： G11C16/30 ,  G11C11/34

    CPC分类号： G11C16/30

    摘要： For negative gate erase and programming of non-volatile floating gate EEPROM devices, large positive or negative voltages from one single negative charge pump and from one single positive charge pump are selectively switched onto a one or more memory sectors of twin-well CMOS negative-gate-erase memory cells. The control gate is negative during erasing and positive during programming. In order for FLASH memories to have minimum layout area, small sectors or arrays of EEPROM cells can be erased all at once using a charge pump which includes two pump capacitors to provide negative voltages to the gate terminals of one or more series PMOS transistors.

    摘要翻译： 对于非挥发性浮置栅极EEPROM器件的负栅极擦除和编程，来自一个单个负电荷泵和一个单个正电荷泵的大的正或负电压被选择性地切换到双阱CMOS负极电荷泵的一个或多个存储器扇区， 门擦除存储单元。 擦除期间控制栅极为负，编程期间为正。 为了使FLASH存储器具有最小的布局面积，可以使用包括两个泵电容器的电荷泵一次清除小区或EEPROM阵列，以向一个或多个串联PMOS晶体管的栅极端提供负电压。