METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR
    1.
    发明申请
    METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR 有权
    用于建模薄膜晶体管的源极 - 漏极电流的方法和装置

    公开(公告)号:US20090157372A1

    公开(公告)日:2009-06-18

    申请号:US12201457

    申请日:2008-08-29

    IPC分类号: G06G7/62

    CPC分类号: G06F17/5036

    摘要: Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

    摘要翻译: 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据,样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时,通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值,其中当前模型是用于预测TFT的源极 - 漏极电流的模型。