公开(公告)号：US20080064133A1

公开(公告)日：2008-03-13

申请号：US11933950

申请日：2007-11-01

申请人： Jae Hoon LEE ,  In Eung KIM ,  Yong Chun KIM ,  Hyun Kyung KIM ,  Moon Heon KONG

发明人： Jae Hoon LEE ,  In Eung KIM ,  Yong Chun KIM ,  Hyun Kyung KIM ,  Moon Heon KONG

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

摘要： A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。 网状DBR反射层具有多个开放区域。 网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。 第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。 在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。