公开(公告)号：US20090315069A1

公开(公告)日：2009-12-24

申请号：US12550057

申请日：2009-08-28

申请人： Jae Seung LEE ,  Bu Gon SHIN ,  Min Ho CHOI ,  Jong Hoon KANG ,  Min A YU ,  Byung Du OH

发明人： Jae Seung LEE ,  Bu Gon SHIN ,  Min Ho CHOI ,  Jong Hoon KANG ,  Min A YU ,  Byung Du OH

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system.

摘要翻译： 公开了一种发光二极管（LED）装置，其包括蓝宝石无基板氮化镓（GaN）LED的晶体结构，其中晶体结构以单元形式安装在子安装基板的第一表面上 芯片，并且子安装基板的第一表面具有大于单元芯片接合的区域的表面积的表面积。 还公开了用于制造LED器件的预制件和用于制造LED器件的方法。 发光二极管的晶体结构在其上生长的蓝宝石衬底在去除之前被处理成单位芯片。 因此，可以防止在去除蓝宝石衬底期间可能发生的发光二极管的晶体结构中的任何裂纹。 因此，可以在批量生产系统中制造薄型发光二极管装置。