摘要:
A method for correction of defects in lithography masks includes determining the existence of mask defects on an original mask, and identifying a stitchable zone around each of the mask defects found on the original mask. Each of the identified stitchable zones on the original mask is blocked out such that circuitry within the stitchable zones is not printed out during exposure of the original mask. A repair mask is formed, the repair mask including corrected circuit patterns from each of the identified stitchable zones.
摘要:
A method and programmed defect test database for designing and building programmed defect test masks. The method uses a defect free mask that is compared to a ‘defective’ database. A variety of defect types and sizes is programmed into the database and used to inspect the defect-free mask. All defects programmed into the database are not affected by performing the method, regardless of size, so the resolution capability of an inspection tool can be determined.
摘要:
Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.