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公开(公告)号:US06309556B1
公开(公告)日:2001-10-30
申请号:US09146600
申请日:1998-09-03
IPC分类号: C23C1414
CPC分类号: C23C14/3414 , C23F1/26 , Y10T428/12472 , Y10T428/12993 , Y10T428/24355
摘要: A method is provided for achieving an enhanced finish on a sputter target surface that results in good film uniformity, low particle counts, and little to no bum-in time. The method involves chemically etching the surface of the sputter target by immersing the surface one or more times in an etching solution, with intermediate rinsing steps. The result is a surface substantially free of mechanical deformation that exhibits a surface similar to a sputtered target with a surface roughness of 10-30 &mgr;in.
摘要翻译: 提供了一种用于在溅射靶表面上实现增强的光洁度的方法,其导致良好的膜均匀性,低的颗粒计数,以及很少甚至没有烧结时间。 该方法包括通过在中间漂洗步骤中将表面浸入蚀刻溶液中一次或多次来对溅射靶的表面进行化学蚀刻。 结果是基本上没有机械变形的表面,其表面类似于表面粗糙度为10-30μm的溅射靶。