公开(公告)号：US06309556B1

公开(公告)日：2001-10-30

申请号：US09146600

申请日：1998-09-03

申请人： James Elliot Joyce ,  Thomas John Hunt ,  Paul Sandford Gilman

发明人： James Elliot Joyce ,  Thomas John Hunt ,  Paul Sandford Gilman

IPC分类号： C23C1414

CPC分类号： C23C14/3414 ,  C23F1/26 ,  Y10T428/12472 ,  Y10T428/12993 ,  Y10T428/24355

摘要： A method is provided for achieving an enhanced finish on a sputter target surface that results in good film uniformity, low particle counts, and little to no bum-in time. The method involves chemically etching the surface of the sputter target by immersing the surface one or more times in an etching solution, with intermediate rinsing steps. The result is a surface substantially free of mechanical deformation that exhibits a surface similar to a sputtered target with a surface roughness of 10-30 &mgr;in.

摘要翻译： 提供了一种用于在溅射靶表面上实现增强的光洁度的方法，其导致良好的膜均匀性，低的颗粒计数，以及很少甚至没有烧结时间。 该方法包括通过在中间漂洗步骤中将表面浸入蚀刻溶液中一次或多次来对溅射靶的表面进行化学蚀刻。 结果是基本上没有机械变形的表面，其表面类似于表面粗糙度为10-30μm的溅射靶。

公开(公告)号：US06299739B1

公开(公告)日：2001-10-09

申请号：US09294031

申请日：1999-04-20

申请人： Takao Fujikawa ,  Takahiko Ishii ,  Yutaka Narukawa ,  Makoto Kadoguchi ,  Yasushi Mizusawa ,  Tomoyasu Kondou ,  Yuji Taguchi

发明人： Takao Fujikawa ,  Takahiko Ishii ,  Yutaka Narukawa ,  Makoto Kadoguchi ,  Yasushi Mizusawa ,  Tomoyasu Kondou ,  Yuji Taguchi

IPC分类号： C23C1414

CPC分类号： C23C14/046 ,  H01L21/2855 ,  H01L21/76877

摘要： This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.

摘要翻译： 本发明提供一种形成EM电阻和低电阻优异的金属布线膜的方法。在通过对形成有孔或槽的待处理基板的绝缘膜的表面进行成膜和覆盖来形成布线结构的方法中 在其上用金属材料如铜，铝，银等，由此用金属材料填充孔或槽内部以形成布线结构，待处理的基板在高压下暴露于高温 气体气氛，连续成膜后沿着孔或槽的内表面轮廓与金属材料覆盖，从而促进金属材料的表面扩散现象，将金属膜重整为薄膜结构，作为金属的表面积 电影最小化。

公开(公告)号：US06202591B1

公开(公告)日：2001-03-20

申请号：US09437684

申请日：1999-11-10

申请人： Matthew R. Witzman ,  Richard A. Bradley, Jr. ,  Christopher W. Lantman ,  Eric R. Cox

发明人： Matthew R. Witzman ,  Richard A. Bradley, Jr. ,  Christopher W. Lantman ,  Eric R. Cox

IPC分类号： C23C1414

CPC分类号： C23C14/243 ,  C23C14/562 ,  Y10T428/31681

摘要： A linear aperture deposition apparatus and process are provided for coating substrates with sublimed or evaporated coating materials. The apparatus and process are particularly suited for producing flexible films having an optical interference coating with a very high surface thickness uniformity and which is substantially free of defects from particulate ejection of a source material. The apparatus includes a source box containing a source material, a heating element to sublime or evaporate the source material, and a chimney to direct the source material vapor from the source box to a substrate. A flow restricting baffle having a plurality of holes is positioned between the source material and the substrate to confine and direct the vapor flow, and an optional floating baffle is positioned on the surface of the source material to further restrict the vapor flow, thereby substantially eliminating source material spatter.

摘要翻译： 提供了一种线性孔径沉积装置和工艺，用于用升华或蒸发的涂层材料涂覆基底。 该设备和方法特别适用于生产具有非常高的表面厚度均匀性的光学干涉涂层的柔性膜，并且基本上没有源材料的颗粒喷射的缺陷。 该装置包括一个包含源材料的源盒，一个使源材料升华或蒸发的加热元件，以及一个将源材料蒸汽从源箱引导到基片上的烟囱。 具有多个孔的流动限制挡板位于源材料和基底之间以限制和引导蒸汽流，并且可选的浮动挡板位于源材料的表面上以进一步限制蒸气流，从而基本上消除 源材料飞溅。

公开(公告)号：US06733848B2

公开(公告)日：2004-05-11

申请号：US09989162

申请日：2001-11-21

申请人： Yukio Morishige ,  Makoto Omiya

发明人： Yukio Morishige ,  Makoto Omiya

IPC分类号： C23C1414

CPC分类号： C23C16/04

摘要： A thin film forming equipment and a method for forming thin films are provided which are capable of forming the thin film of high quality and of effectively preventing CVD material gas from leaking to surroundings at a low cost. The thin film equipment contains a substrate, a substrate holding device used to hold the substrate and a device used to provide an atmospheric gas to a surface of the substrate held by the substrate holding device, wherein an upper face of the substrate held by the substrate holding device and an upper face of the substrate holding device are almost on one plane.

摘要翻译： 提供薄膜形成设备和薄膜形成方法，其能够以低成本形成高质量的薄膜，并且有效地防止CVD材料气体泄漏到周围环境。 薄膜设备包括基板，用于保持基板的基板保持装置和用于向由基板保持装置保持的基板的表面提供气氛气体的装置，其中由基板保持的基板的上表面 保持装置和基板保持装置的上表面几乎在一个平面上。

公开(公告)号：US06333000B1

公开(公告)日：2001-12-25

申请号：US08463883

申请日：1995-06-05

申请人： Darryl F. Garrigus

发明人： Darryl F. Garrigus

IPC分类号： C23C1414

CPC分类号： C03C14/004 ,  B32B5/26 ,  B32B18/00 ,  C03C11/002 ,  C03C14/002 ,  C03C2214/02 ,  C03C2214/04 ,  C03C2214/06 ,  C03C2214/10 ,  C03C2214/20 ,  C03C2214/32 ,  C04B14/24 ,  C04B30/02 ,  C04B35/4504 ,  C04B35/4508 ,  C04B35/62254 ,  C04B35/624 ,  C04B35/636 ,  C04B35/80 ,  C04B35/803 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  F25D3/10 ,  F28D15/046 ,  F28F21/04 ,  H01L39/143

摘要： Processes are provided for forming composites comprising a LaMnO3 perovskite coatings (or a related perovskite) on a mat of ceramic particles (e.g., fibers, microballoons, or mixtures thereof) or LaMnO3-family sol-gel binders infused into the mat to form the connecting, rigidifying bridges.

摘要翻译： 提供了用于在陶瓷颗粒（例如，纤维，微球或其混合物）的垫上或LaMnO 3族溶胶 - 凝胶粘合剂中注入包含LaMnO3钙钛矿涂层（或相关钙钛矿）的复合材料以形成复合材料，以形成连接 ，刚性桥梁。

公开(公告)号：US06730415B2

公开(公告)日：2004-05-04

申请号：US10110217

申请日：2002-04-19

申请人： Yoshitsugu Shibuya ,  Eigou Hashimoto ,  Junji Satoh ,  Masahiro Satoh ,  Seiichi Hiroe

发明人： Yoshitsugu Shibuya ,  Eigou Hashimoto ,  Junji Satoh ,  Masahiro Satoh ,  Seiichi Hiroe

IPC分类号： C23C1414

CPC分类号： A44C27/006 ,  C23C14/0057 ,  C23C14/06 ,  C23C14/165 ,  C23C14/3414 ,  Y10S428/938 ,  Y10T428/12493 ,  Y10T428/12778 ,  Y10T428/12812 ,  Y10T428/12875 ,  Y10T428/12889

摘要： A film is formed on the surface of a soft metal portion (2) such that the film contains phosphorus and either platinum or palladium, and further, at least one element having homogeneous solubility with platinum or palladium, with the content of the phosphorus being in a range of about 15 to 25 atomic %, or contains boron and iron with the content of the boron being in a range of from about 15 to 25 atomic %. Thus, a soft metal is made up by turning the film into a hard layer (3) made of an amorphous alloy.

摘要翻译： 在软金属部分（2）的表面上形成膜，使得该膜含有磷和铂或钯，此外，至少一种与铂或钯具有均匀溶解性的元素，其中磷的含量为 约15至25原子％的范围，或含有硼含量在约15至25原子％范围内的硼和铁。 因此，通过将膜转变成由非晶合金制成的硬质层（3）来制成软金属。

公开(公告)号：US06669795B2

公开(公告)日：2003-12-30

申请号：US10051737

申请日：2002-01-17

申请人： A. David Johnson ,  Valery Martynov

发明人： A. David Johnson ,  Valery Martynov

IPC分类号： C23C1414

CPC分类号： C22F1/006 ,  C22C30/00 ,  C23C14/165 ,  C23C14/3464 ,  C23C14/548

摘要： A method of fabricating ternary TiNi-based alloys to achieve substantially higher phase-change transition temperatures in the resulting SMA materials and which have optimal thermo-mechanical properties. One target is provided which comprises the element Ti, a second target comprises the element Ni and a third target comprises an element which when combined with Ti and Ni can produce a shape memory alloy. The three targets are co-sputtered onto a substrate at rates which are controlled so that the sum of the percentage composition of the elements that are from the left side of the periodic table are substantially 50 atomic percent, and the sum of percentage composition of the elements that are from the right side of the periodic table comprise the remaining 50 atomic percent.

公开(公告)号：US06367414B2

公开(公告)日：2002-04-09

申请号：US09758839

申请日：2001-01-10

申请人： Matthew R. Witzman ,  Richard A. Bradley, Jr. ,  Christopher W. Lantman ,  Eric R. Cox

发明人： Matthew R. Witzman ,  Richard A. Bradley, Jr. ,  Christopher W. Lantman ,  Eric R. Cox

IPC分类号： C23C1414

CPC分类号： C23C14/243 ,  C23C14/562 ,  Y10T428/31681

摘要： A linear aperture deposition apparatus and process are provided for coating substrates with sublimed or evaporated coating materials. The apparatus and process are particularly suited for producing flexible films having an optical interference coating with a very high surface thickness uniformity and which is substantially free of defects from particulate ejection of a source material. The apparatus includes a source box containing a source material, a heating element to sublime or evaporate the source material, and a chimney to direct the source material vapor from the source box to a substrate. A flow restricting baffle having a plurality of holes is positioned between the source material and the substrate to confine and direct the vapor flow, and an optional floating baffle is positioned on the surface of the source material to further restrict the vapor flow, thereby substantially eliminating source material spatter.

摘要翻译： 提供了一种线性孔径沉积装置和工艺，用于用升华或蒸发的涂层材料涂覆基底。 该设备和方法特别适用于生产具有非常高的表面厚度均匀性的光学干涉涂层的柔性膜，并且基本上没有源材料的颗粒喷射的缺陷。 该装置包括一个包含源材料的源盒，一个使源材料升华或蒸发的加热元件，以及一个将源材料蒸汽从源箱引导到基片上的烟囱。 具有多个孔的流动限制挡板位于源材料和基底之间以限制和引导蒸汽流，并且可选的浮动挡板位于源材料的表面上，以进一步限制蒸气流，从而基本上消除 源材料飞溅。

公开(公告)号：US06261646B1

公开(公告)日：2001-07-17

申请号：US09639746

申请日：2000-08-14

申请人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

发明人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

IPC分类号： C23C1414

CPC分类号： H01L43/12 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

摘要： A low resistance magnetic tunnel junction with low resistance barrier layer and method of fabrication is disclosed. A first magnetic layer of material with a surface is provided and a continuous layer of material, e.g. aluminum, is formed on the surface of the first magnetic layer. The continuous layer of material is treated to produce a low resistance barrier layer of oxynitride material and a second magnetic layer is formed on the barrier layer of oxynitride material to complete the low resistance magnetic tunnel junction.

摘要翻译： 公开了具有低电阻阻挡层的低电阻磁隧道结及其制造方法。 提供具有表面的第一磁性材料层和连续的材料层，例如， 铝，形成在第一磁性层的表面上。 处理连续的材料层以产生氮氧化物材料的低电阻阻挡层，并且在氧氮化物材料的阻挡层上形成第二磁性层以完成低电阻磁性隧道结。

公开(公告)号：US06544357B1

公开(公告)日：2003-04-08

申请号：US08776382

申请日：1997-01-31

申请人： Franz Hehmann ,  Michael Weidemann

发明人： Franz Hehmann ,  Michael Weidemann

IPC分类号： C23C1414

CPC分类号： C23C14/14 ,  C23C14/22 ,  Y02T50/67 ,  Y10T137/85938

摘要： A new class of light or reactive elements and monophase &agr;′-matrix magnesium- and aluminum-based alloys with superior engineering properties, for the latter being based on a homogeneous solute distribution or a corrosion-resistant and metallic shiny surface withstanding aqueous and saline environments and resulting from the control during synthesis of atomic structure over microstructure to net shape of the final product, said &agr;′-matrix being retained upon conversion into a cast or wrought form. The manufacture of the materials relies on the control of deposition temperature and in-vacuum consolidation during vapor deposition, on maximized heat transfer or casting pressure during all-liquid processing and on controlled friction and shock power during solid state alloying using a mechanical milling technique. The alloy synthesis is followed by extrusion, rolling, forging, drawing and superplastic forming for which the conditions of mechanical working, thermal exposure and time to transfer corresponding metastable &agr;′-matrix phases and microstructure into product form depend on thermal stability and transformation behavior at higher temperatures of said light alloy as well as on the defects inherent to a specific alloy synthesis employed. Alloying additions to the resulting &agr;′-monophase matrix include 0.1 to 40 wt. % metalloids or light rare earth or early transition or simple or heavy rare earth metals or a combination thereof. The eventually more complex light alloys are designed to retain the low density and to improve damage tolerance of corresponding base metals and may include an artificial aging upon thermomechanical processing with or without solid solution heat and quench and annealing treatment for a controlled volume fraction and size of solid state precipitates to reinforce alloy film, layer or bulk and resulting surface qualities. Novel processes are employed to spur production and productivity for the new materials.