公开(公告)号：US20050272238A1

公开(公告)日：2005-12-08

申请号：US11200073

申请日：2005-08-10

Applicant: James Phillips ,  Len Spaulding

Inventor： James Phillips ,  Len Spaulding

IPC: C22B5/12 ,  C22B11/00 ,  C22B11/02 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76838 ,  C22B5/12 ,  C22B11/02

Abstract: The present invention provides a method for purifying ruthenium sources to obtain high purity ruthenium metal and form a ruthenium metal pattern on a semiconductor substrate without the need for high temperature processing or a complex series of wet processes. A gas stream including ozone (O3) is brought into contact with a ruthenium source in one or more reaction vessels to form ruthenium tetraoxide (RuO4), a compound that is a gas at the reaction conditions. The ruthenium tetraoxide, along with unreacted ozone and the remainder of the gas stream is then fed into a collection vessel where the gaseous ruthenium tetraoxide is reduced to form a ruthenium dioxide (RuO2) layer on a semiconductor substrate. The deposited ruthenium dioxide is then reduced, preferably with hydrogen, to produce highly pure ruthenium metal that may be, in turn, patterned and dry etched using ozone as an etchant gas.

Abstract translation: 本发明提供一种用于纯化钌源以获得高纯度钌金属并在半导体衬底上形成钌金属图案的方法，而不需要高温处理或复杂的一系列湿法。 使包含臭氧（O 3 3 N）的气流与一个或多个反应容器中的钌源接触以形成四氧化钌（RuO 4 S 4），其为化合物 反应条件下的气体。 然后将四氧化钌，以及未反应的臭氧和气流的其余部分进料到收集容器中，在该收集容器中，气态钌四氧化物被还原以在半导体衬底上形成二氧化钌（RuO 2 N 2）层 。 然后沉积的二氧化钌优选用氢气还原，以产生高纯度的钌金属，其可以使用臭氧作为蚀刻剂气体进行图案化和干蚀刻。