公开(公告)号：US11764305B2

公开(公告)日：2023-09-19

申请号：US17510534

申请日：2021-10-26

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H10K59/126

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/126

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US12249654B2

公开(公告)日：2025-03-11

申请号：US18447400

申请日：2023-08-10

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H10K59/123 ,  H10K59/126

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US11189734B2

公开(公告)日：2021-11-30

申请号：US16735800

申请日：2020-01-07

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H01L21/00 ,  H01L27/32

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.