公开(公告)号：US20150311228A1

公开(公告)日：2015-10-29

申请号：US14793477

申请日：2015-07-07

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: H01L27/12 ,  H01L29/786 ,  H01L23/528

CPC classification number: H01L27/124 ,  G02F1/13338 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G06F3/038 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  H01L23/528 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

公开(公告)号：US10998347B2

公开(公告)日：2021-05-04

申请号：US16885419

申请日：2020-05-28

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: G06F3/038 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1345 ,  G06F3/044 ,  G06F3/041 ,  H01L23/528 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/045 ,  H01L27/32

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

公开(公告)号：US09721975B2

公开(公告)日：2017-08-01

申请号：US14793477

申请日：2015-07-07

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: G06F3/045 ,  H01L27/12 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1345 ,  H01L23/528 ,  H01L29/786 ,  G06F3/038

CPC classification number: H01L27/124 ,  G02F1/13338 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G06F3/038 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  H01L23/528 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

公开(公告)号：US11500250B2

公开(公告)日：2022-11-15

申请号：US17132756

申请日：2020-12-23

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Yoshitaka Ozeki ,  Nobutaka Ozaki

IPC: G02F1/1343 ,  G02F1/1362

Abstract: A display device is provided and includes first signal line between first and second pixel areas in first direction; first switching element in first pixel area, first switching element including first relay electrode in first pixel area; second switching element in second pixel area, second switching element including second relay electrode in second pixel area; first pixel electrode in the first pixel area; and second pixel electrode in second pixel area, wherein first pixel electrode includes first connector, second pixel electrode includes second connector, first and second connectors are arranged in first direction with first signal line interposed therebetween, gap width between first connector and first signal line is different from gap width between first signal line and second connector, and gap width between first relay electrode and first signal line is different from gap width between first signal line and second relay electrode.

公开(公告)号：US20200295049A1

公开(公告)日：2020-09-17

申请号：US16885419

申请日：2020-05-28

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: H01L27/12 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1345 ,  G06F3/041 ,  H01L23/528 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

公开(公告)号：US10714505B2

公开(公告)日：2020-07-14

申请号：US15635383

申请日：2017-06-28

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: G06F3/038 ,  H01L27/12 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1345 ,  G06F3/041 ,  H01L23/528 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/045 ,  H01L27/32

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

公开(公告)号：US20170294452A1

公开(公告)日：2017-10-12

申请号：US15635383

申请日：2017-06-28

Applicant: Japan Display Inc.

Inventor： Mitsufumi Sogabe ,  Masaki Murase ,  Hiroshi Mizuhashi

IPC: H01L27/12 ,  G02F1/1333 ,  G06F3/041 ,  G02F1/1362 ,  G06F3/044 ,  H01L23/528 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/13338 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G06F3/038 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  H01L23/528 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.