公开(公告)号：US12080718B2

公开(公告)日：2024-09-03

申请号：US18141542

申请日：2023-05-01

Applicant: Japan Display Inc.

Inventor： Yoshitaka Ozeki ,  Satoshi Tokura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/124

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

公开(公告)号：US11676972B2

公开(公告)日：2023-06-13

申请号：US17716070

申请日：2022-04-08

Applicant: Japan Display Inc.

Inventor： Yoshitaka Ozeki ,  Satoshi Tokura

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  G02F1/136286 ,  H01L27/124

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

公开(公告)号：US20220328531A1

公开(公告)日：2022-10-13

申请号：US17716070

申请日：2022-04-08

Applicant: Japan Display Inc.

Inventor： Yoshitaka Ozeki ,  Satoshi Tokura

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

Abstract: A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.