公开(公告)号：US20060014333A1

公开(公告)日：2006-01-19

申请号：US11178337

申请日：2005-07-12

申请人： Jean-Charles Barbe ,  Maud Vinet ,  Beatrice Drevet ,  Carine Jahan

发明人： Jean-Charles Barbe ,  Maud Vinet ,  Beatrice Drevet ,  Carine Jahan

IPC分类号： H01L21/84 ,  H01L21/44 ,  H01L21/20

CPC分类号： H01L21/78 ,  H01L21/76205 ,  H01L21/76281 ,  H01L21/84 ,  H01L21/86

摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.

公开(公告)号：US07510919B2

公开(公告)日：2009-03-31

申请号：US11178337

申请日：2005-07-12

申请人： Jean-Charles Barbe ,  Maud Vinet ,  Béatrice Drevet ,  Carine Jahan

发明人： Jean-Charles Barbe ,  Maud Vinet ,  Béatrice Drevet ,  Carine Jahan

IPC分类号： H01L21/84

CPC分类号： H01L21/78 ,  H01L21/76205 ,  H01L21/76281 ,  H01L21/84 ,  H01L21/86

摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring.This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.

摘要翻译： 本发明涉及厚度小于10nm的薄膜，由可氧化半导体材料制成并以图案形式图案化。 为了防止所述图案的去湿现象，横向氧化区被布置在薄膜的每个图案的周边，以形成锚定。 该锚定可以通过在整个薄膜上形成氧化物层然后沉积氮化物层来实现。 然后对氮化物和氧化物层和薄膜进行图案化，并且薄膜被横向氧化，使得薄膜的每个图案在其周围包含预定宽度的氧化区。 然后去除氮化物和氧化物层，以便释放在其周边氧化的图案。