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公开(公告)号：US06787691B2
公开(公告)日：2004-09-07
申请号：US10146707
申请日：2002-05-14
申请人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
发明人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
IPC分类号： H01L3528
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译： 一种用于产生运行电子部件的电力的装置。 该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。 在运行期间，热量从高温区域流入导热基板，热量流入发电机。 将热电材料（例如，BiTe合金基膜或其它热电材料）放置成与导热基板热接触。 低温区域位于热电材料的与高温区域相反的一侧。 热梯度产生电力并驱动电气部件。
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公开(公告)号：US06388185B1
公开(公告)日：2002-05-14
申请号：US09198069
申请日：1998-11-23
申请人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
发明人： Jean-Pierre Fleurial , Margaret A. Ryan , Alex Borshchevsky , Wayne Phillips , Elizabeth A. Kolawa , G. Jeffrey Snyder , Thierry Caillat , Thorsten Kascich , Peter Mueller
IPC分类号： H01L3530
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译： 一种用于产生运行电子部件的电力的装置。 该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。 在运行期间，热量从高温区域流入导热基板，热量流入发电机。 将热电材料（例如，BiTe合金基膜或其它热电材料）放置成与导热基板热接触。 低温区域位于热电材料的与高温区域相反的一侧。 热梯度产生电力并驱动电气部件。
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3.发明授权Thermoelectric devices based on materials with filled skutterudite structures 有权基于具有填充方钴矿结构的材料的热电装置公开(公告)号：US06660926B2
公开(公告)日：2003-12-09
申请号：US10007549
申请日：2001-11-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3528
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译： 一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。 高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。 公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。 使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。
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公开(公告)号：US6069312A
公开(公告)日：2000-05-30
申请号：US908814
申请日：1997-08-07
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
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5.发明授权Thermoelectric materials with filled skutterudite structure for thermoelectric devices 失效用于热电装置的具有填充方钴矿结构的热电材料公开(公告)号：US06342668B1
公开(公告)日：2002-01-29
申请号：US09478976
申请日：2000-01-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3534
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译： 一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。 高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。 公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。 使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。
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