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公开(公告)号：US20120190177A1
公开(公告)日：2012-07-26
申请号：US13436850
申请日：2012-03-31
IPC分类号： H01L21/265 , H01L21/20
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
摘要翻译： 一种方法包括将锗（Ge）层外延生长到Ge衬底上并将具有补偿原子半径的补偿物质结合到Ge层中。 该方法包括将具有掺杂剂原子半径的n型掺杂物种类植入到Ge层中。 该方法包括选择n型掺杂剂物质和补偿物质，使得Ge原子半径的大小在n型掺杂剂原子半径和补偿原子半径之间。
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公开(公告)号：US20120135587A1
公开(公告)日：2012-05-31
申请号：US13357656
申请日：2012-01-25
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译： 公开了一种在半导体中产生n型载流子的方法。 该方法包括提供具有原子半径的半导体。 将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。 将补偿物种植入到半导体中，补偿物质具有补偿原子半径。 以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。 公开了用于在锗（Ge）中生成n型载流子的另一种方法。 该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。 对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。 重复注入和热退火直到目标n型载流子浓度达到。
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公开(公告)号：US08642431B2
公开(公告)日：2014-02-04
申请号：US13437036
申请日：2012-04-02
IPC分类号： H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
摘要翻译： 场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。 在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。 选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。
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公开(公告)号：US08178430B2
公开(公告)日：2012-05-15
申请号：US12420258
申请日：2009-04-08
IPC分类号： H01L21/265 , H01L21/425
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
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公开(公告)号：US08476152B2
公开(公告)日：2013-07-02
申请号：US13436850
申请日：2012-03-31
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
摘要翻译： 一种方法包括将锗（Ge）层外延生长到Ge衬底上并将具有补偿原子半径的补偿物质结合到Ge层中。 该方法包括将具有掺杂剂原子半径的n型掺杂物种类植入到Ge层中。 该方法包括选择n型掺杂剂物质和补偿物质，使得Ge原子半径的大小在n型掺杂剂原子半径和补偿原子半径之间。
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公开(公告)号：US20120190161A1
公开(公告)日：2012-07-26
申请号：US13437036
申请日：2012-04-02
IPC分类号： H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
摘要翻译： 场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。 在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。 选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。
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公开(公告)号：US08343863B2
公开(公告)日：2013-01-01
申请号：US13357656
申请日：2012-01-25
IPC分类号： H01L21/265 , H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译： 公开了一种在半导体中产生n型载流子的方法。 该方法包括提供具有原子半径的半导体。 将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。 将补偿物种植入到半导体中，补偿物质具有补偿原子半径。 以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。 公开了用于在锗（Ge）中生成n型载流子的另一种方法。 该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。 对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。 重复注入和热退火直到目标n型载流子浓度达到。
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公开(公告)号：US20100261319A1
公开(公告)日：2010-10-14
申请号：US12420258
申请日：2009-04-08
IPC分类号： H01L21/265 , H01L21/20 , H01L21/335
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
摘要翻译： 公开了一种在半导体中产生n型载流子的方法。 该方法包括提供具有原子半径的半导体。 将n型掺杂物种植入半导体，其中n型掺杂剂物质具有掺杂剂原子半径。 将补偿物种植入到半导体中，补偿物质具有补偿原子半径。 以使得半导体原子半径的尺寸在掺杂剂原子半径和补偿原子半径之间的方式选择n型掺杂物种类和补偿种类。 公开了用于在锗（Ge）中生成n型载流子的另一种方法。 该方法包括设定载体的目标浓度，将一定剂量的n型掺杂剂物质注入到Ge中，并选择与目标载体浓度分数相对应的剂量。 对Ge进行热退火，以激活n型掺杂物种类并修复至少一部分注入损伤。 重复注入和热退火直到目标n型载流子浓度达到。
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