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    Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
    1.
    发明授权
    Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection 有权
    利用由通道引发的二次电子注入产生的俘获电荷的非易失性半导体存储单元

    公开(公告)号：US06528845B1

    公开(公告)日：2003-03-04

    申请号：US09616569

    申请日：2000-07-14

    申请人： Jeffrey D. Bude ,  Richard J. McPartland ,  Ranbir Singh

    发明人： Jeffrey D. Bude ,  Richard J. McPartland ,  Ranbir Singh

    IPC分类号： H01L29792

    CPC分类号： H01L29/66833 ,  G11C16/0458 ,  G11C16/0466 ,  H01L27/105 ,  H01L27/115 ,  H01L29/7885 ,  H01L29/792

    摘要： The present invention provides a semiconductor device that comprises a tub region located in a semiconductor substrate, wherein the tub region has a tub electrical contact connected thereto. The semiconductor device further comprises a trap charge insulator layer located on the first insulator layer and a control gate located over the trap charge insulator layer. The control gate has a gate contact connected thereto for providing a second bias voltage to the semiconductor device that, during programming, is opposite in polarity to that of the first bias voltage.

    摘要翻译： 本发明提供了一种半导体器件，其包括位于半导体衬底中的桶区，其中，所述桶区具有与其连接的桶电接触。 半导体器件还包括位于第一绝缘体层上的陷阱电荷绝缘体层和位于阱电荷绝缘体层上方的控制栅极。 控制栅极具有连接到其上的栅极接触，用于向半导体器件提供第二偏置电压，在编程期间极性与第一偏置电压相反。