公开(公告)号：US06919755B2

公开(公告)日：2005-07-19

申请号：US10464611

申请日：2003-06-18

申请人： Jens Egerer ,  Thomas Borst

发明人： Jens Egerer ,  Thomas Borst

IPC分类号： G11C5/14 ,  H01J19/82

CPC分类号： G11C5/147

摘要： The invention relates to a voltage regulating circuit arrangement for converting a first voltage (VEXT) applied to an input of said voltage regulating circuit arrangement into a second voltage (VBLH) that may be tapped at an output of said voltage regulating circuit arrangement, wherein, when said first voltage (VEXT) falls below a threshold value (VEXT_THRESHOLD), the first voltage (VEXT) applied to the input of said voltage regulating circuit arrangement is connected through to said output of said voltage regulating circuit arrangement.

摘要翻译： 本发明涉及一种用于将施加到所述电压调节电路装置的输入的第一电压（VEXT）转换成可在所述电压调节电路装置的输出端被抽头的第二电压（VBLH）的电压调节电路装置， 当所述第一电压（VEXT）低于阈值（VEXT_THRESHOLD）时，施加到所述电压调节电路装置的输入端的第一电压（VEXT）连接到所述电压调节电路装置的所述输出端。

公开(公告)号：US06768693B2

公开(公告)日：2004-07-27

申请号：US10368333

申请日：2003-02-18

申请人： Robert Feurle ,  Thomas Borst ,  Jens Egerer

发明人： Robert Feurle ,  Thomas Borst ,  Jens Egerer

IPC分类号： G11C700

CPC分类号： G11C7/04 ,  G11C11/406 ,  G11C2207/2227

摘要： An integrated dynamic memory contains a control circuit for controlling a refresh mode in which the memory cells undergo refreshing of their contents. A controllable frequency generator serves for setting a refresh frequency. A temperature sensor circuit detects a temperature of the memory and outputs a first reference value, and an externally writable circuit is provided for outputting a second reference value. The temperature sensor circuit and the externally writable circuit are alternatively connectible to the control input of the frequency generator for setting the refresh frequency. If the externally writable circuit has been written, the second reference value, which corresponds to a temperature, is fed to the frequency generator; otherwise, the first reference value is supplied. In this manner, users of the memory that are unable to measure temperature can expediently optimize the power consumption that is necessary for standby mode and reduce it at low temperatures.

摘要翻译： 集成动态存储器包含用于控制刷新模式的控制电路，其中存储器单元经历其内容刷新。 可控频率发生器用于设置刷新频率。 温度传感器电路检测存储器的温度并输出第一参考值，并且提供外部可写入电路以输出第二参考值。 温度传感器电路和外部可写入电路可替换地连接到频率发生器的控制输入端，用于设定刷新频率。 如果写入外部可写入电路，则将对应于温度的第二参考值馈送到频率发生器; 否则，提供第一个参考值。 以这种方式，不能测量温度的存储器的用户可以方便地优化待机模式所需的功耗并在低温下降低功耗。

公开(公告)号：US07486116B2

公开(公告)日：2009-02-03

申请号：US10924207

申请日：2004-08-24

申请人： Jens Egerer ,  Thomas Borst

发明人： Jens Egerer ,  Thomas Borst

IPC分类号： H03K3/00

CPC分类号： G11C7/1057 ,  G11C7/1051 ,  H03K17/145 ,  H03K17/164 ,  H03K19/00384

摘要： The invention relates to a driver device and a method for operating a driver device in particular for a semiconductor device. The driver device includes a signal driver connected to a supply voltage. The driver device also includes a signal driver activating circuit section for activating a further signal driver when the supply voltage lies below a predetermined threshold value.

摘要翻译： 本发明涉及一种用于操作驱动器件的驱动器器件和方法，特别是用于半导体器件。 驱动器装置包括连接到电源电压的信号驱动器。 驱动器装置还包括信号驱动器启动电路部分，用于当电源电压低于预定阈值时激活另外的信号驱动器。

公开(公告)号：US20050077929A1

公开(公告)日：2005-04-14

申请号：US10924207

申请日：2004-08-24

申请人： Jens Egerer ,  Thomas Borst

发明人： Jens Egerer ,  Thomas Borst

IPC分类号： G11C7/10 ,  H03K17/14 ,  H03K17/16 ,  H03K19/003 ,  H03K3/00

CPC分类号： G11C7/1057 ,  G11C7/1051 ,  H03K17/145 ,  H03K17/164 ,  H03K19/00384

摘要： The invention relates to a method for operating a driver device (1), and to a driver device (1), in particular for a semiconductor device, said driver device (1) comprising: a signal driver (6a) connected to a supply voltage (VDDQ), c h a r a c t e r i z e d i n t h a t the driver device (1) additionally comprises: means (5) for activating a further signal driver (6b) when the supply voltage (VDDQ) lies below a predetermined threshold value (VDDQthreshold, VDDQthreshold1).

摘要翻译： 本发明涉及一种用于操作驱动器件（1）的方法，特别涉及用于半导体器件的驱动器器件（1），所述驱动器器件（1）包括：信号驱动器（6a），连接到电源电压 （VDDQ），其特征在于驱动器装置（1）还包括：当电源电压（VDDQ）低于预定阈值（VDDQthreshold，VDDQthreshold1））时，用于激活另外的信号驱动器（6b）的装置（5）。

公开(公告)号：US06744686B2

公开(公告)日：2004-06-01

申请号：US10301398

申请日：2002-11-21

申请人： Thomas Borst

发明人： Thomas Borst

IPC分类号： G11C700

CPC分类号： G11C5/14 ,  G11C5/147

摘要： A semiconductor memory module with a changeover device by which an internal voltage supply circuit can be switched on or off in a simple manner. The changeover device has two evaluation circuits, one evaluation circuit being used for switching on the voltage supply and the second evaluation circuit being used for switching off the voltage supply. In this way, the two evaluation circuits can be optimized with regard to functionality, circuit layout and current consumption.

摘要翻译： 一种具有转换装置的半导体存储器模块，通过该切换装置可以以简单的方式接通或断开内部电压供应电路。 切换装置具有两个评估电路，一个评估电路用于接通电压源，第二评估电路用于关断电源。 以这种方式，可以在功能，电路布局和电流消耗方面优化两个评估电路。

公开(公告)号：US06417722B1

公开(公告)日：2002-07-09

申请号：US09525820

申请日：2000-03-15

申请人： Helmut Schneider ,  Jürgen Lindolf ,  Thomas Borst ,  Hermann Ruckerbauer

发明人： Helmut Schneider ,  Jürgen Lindolf ,  Thomas Borst ,  Hermann Ruckerbauer

IPC分类号： H01L29772

CPC分类号： H01L27/088 ,  H01L21/761 ,  H01L29/1087

摘要： A sense amplifier configuration includes a semiconductor substrate, a well having a variable well potential and insulated in the semiconductor substrate, and at least one field-effect transistor in the well. The transistor has a short channel length and an adjustable threshold voltage. Locating the field-effect transistor in an insulated well with a controllable potential allows for compensation of deviations in the threshold voltage with the substrate control effect. The threshold voltage can increase with increasingly larger negative voltage values of the well potential. The threshold voltage has an actual value and a target value, and the well potential can be controlled as a function of a difference between the actual and target threshold voltage values. The well potential can vary from approximately +200 mV to −400 mV, and in steps of approximately 50 mV. The field-effect transistor has a switched-off state, and the well potential can be different from an active potential in the switched-off state of the field-effect transistor, preferably, the well potential is 0 V in the switched-off state. The field-effect transistor can be a plurality of field-effect transistors all disposed in the well. The semiconductor substrate, the well, and the field-effect transistor can be fabricated by ion implantation.

摘要翻译： 读出放大器配置包括半导体衬底，具有可变阱电位且在半导体衬底中绝缘的阱以及阱中的至少一个场效应晶体管。 晶体管具有短通道长度和可调阈值电压。 将场效应晶体管定位在具有可控电位的绝缘阱中，可以利用衬底控制效应来补偿阈值电压的偏差。 阈值电压可以随着井电势的负电压值越来越大而增加。 阈值电压具有实际值和目标值，并且阱电位可以作为实际阈值电压值和目标阈值电压值之间的差值的函数进行控制。 阱电位可以从大约+ 200mV到-400mV，步长约50mV。 场效应晶体管具有关断状态，并且阱电位可以与场效应晶体管的关断状态下的有效电位不同，优选在关断状态下阱电位为0V 。 场效应晶体管可以是全部设置在阱中的多个场效应晶体管。 半导体衬底，阱和场效应晶体管可以通过离子注入来制造。